Xinhua News Agency, Tokyo, May 28th: ​​Researchers at the Institute of Physical and Chemical Research of Japan published a paper on the 28th edition of the American Journal of Physics Review News that they discovered that a synthetic cadmium telluride oxide was changed from a conductor at a specific temperature. The reason for non-magnetic semiconductors. This characteristic makes it possible to become a new material for storage that is not afraid of demagnetization.
According to a press release issued by the Institute of Physical and Chemical Research, the conductivity of most materials at different temperatures does not change, and some types of metal oxides change their conductivity when the temperature changes. A synthetic cadmium tellurium oxide has good electrical conductivity at room temperature, and when cooled to -52 degrees Celsius, it will transform from a conductor to a non-magnetic semiconductor.
Researchers from the Institute of Physical and Chemical Research, the University of Tokyo, and Kobe University tried to use X-ray emission from the large synchrotron radiography accelerator Spring-8 to observe the arrangement of the electron spins of helium atoms in this cadmium-tellurium oxide and found that this oxide At the same time when it was transformed into a semiconductor, there were two directions of electron spin alignment. This special arrangement causes the overall magnetic properties of the oxide to disappear, while the two spin directions can represent the two states 0 and 1 necessary for data storage.
According to the gazette, once the magnetic storage medium hitherto is near a strong magnetic field, the stored data may be eliminated. Since this cadmium tellurium oxide is not magnetic, it is not afraid of degaussing, and it is expected to become a new memory material. However, there are many issues to be solved from practical applications, such as how to make the electron spin arrangement change at room temperature, toxicity treatment of cadmium and tellurium, and the like.
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